Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser

Materials Science in Semiconductor Processing

Volumn 15, Issue 1, 2012, Pages 86-90

  Li, S G ^a   Gong, Q ^b   Cao, C F ^b   Wang, X Z ^a   Chen, P ^b   Yue, L ^b   Liu, Q B ^b   Wang, H L ^c   Ma, C H ^c  

^a SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c QUFU NORMAL UNIVERSITY   (China)

Author keywords

Gas source molecular beam epitaxy; Indium phosphide; Quantum dot laser; Semiconductor laser

Indexed keywords

CONTINUOUS WAVE MODES; FIXED CURRENT; INAS/INP; INJECTION CURRENTS; LASER SPECTRA; LASING CHARACTERISTICS; LASING PEAKS; LASING SPECTRUM; LOW TEMPERATURES; OPERATING TEMPERATURE; QUANTUM DOTS LASER; SPECTRAL BROADENING; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; WAVELENGTH REGIONS; WAVELENGTH STABILITY;

GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM PHOSPHIDE; QUANTUM DOT LASERS; SEMICONDUCTOR LASERS; TEMPERATURE;

QUANTUM WELL LASERS;

EID: 84861146511     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.10.001     Document Type: Article

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