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Volumn 94, Issue 8, 2009, Pages

Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique

(9) Zhou, D a,b Piron, R a Dontabactouny, M a Dehaese, O a Grillot, F a Batte, T a Tavernier, K a Even, J a Loualiche, S a

a UNIVERSITÉ DE RENNES 1 (France)

b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; INDIUM ARSENIDE; LASERS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING INDIUM; THRESHOLD CURRENT DENSITY;

BROAD-AREA LASERS; CAVITY LENGTHS; EMISSION WAVELENGTHS; INAS; INHOMOGENEOUS BROADENING; INP; LOW THRESHOLD CURRENT DENSITIES; QUANTUM DASHES; QUANTUM-DASH LASERS; ULTRA-LOW THRESHOLDS;

SEMICONDUCTOR LASERS;

EID: 61349134048 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3088862 Document Type: Article

Times cited : (20)

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