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Volumn 12, Issue 5, 2012, Pages 2222-2227

A proposed confinement modulated gap nanowire transistor based on a metal (Tin)

Author keywords

Ab initio calculations; electron transport; electronic structure; gray tin; nanowire transistor; quantum confinement

Indexed keywords

AB INITIO CALCULATIONS; AGGRESSIVE SCALING; ATOMIC DIMENSION; BAND GAP ENGINEERING; DOPANT IMPURITIES; ELECTRON TRANSPORT; ENERGY BANDGAPS; FREE CARRIERS; LENGTH SCALE; MATERIALS ENGINEERING; NANOWIRE TRANSISTORS; QUASI-ONE-DIMENSIONAL; SEMICONDUCTOR NANOSTRUCTURES; WIRE DIAMETER;

EID: 84861046075     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2040817     Document Type: Article
Times cited : (48)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.