Modulation of the operational characteristics of amorphous InGaZnO thin-film transistors by In 2O 3 nanoparticles

Journal of Physics D: Applied Physics

Volumn 45, Issue 20, 2012, Pages

  Lee, Min Jung ^a   Lee, Tae Il ^a   Park, Jee Ho ^a   Kim, Jung Han ^b   Chae, Gee Sung ^b   Jun, Myung Chul ^b   Hwang, Yong Kee ^b   Baik, Hong Koo ^a   Lee, Woong ^c   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b LG Display Co Ltd   (South Korea)

^c Changwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INGAZNO; CHANNEL CHARACTERISTICS; CHANNEL LAYERS; DEVICE PERFORMANCE; MULTIPLE SPIN COATING; NANO SCALE; NANOPARTICLE SUSPENSION; OPERATIONAL CHARACTERISTICS; PER UNIT; REFERENCE DEVICES; ROOM TEMPERATURE; SUBSTRATE SURFACE; SURFACE DENSITY; THIN-FILM TRANSISTOR (TFTS); WAFER SURFACE;

AMORPHOUS SILICON; COATINGS; INDIUM; LIGHT POLARIZATION; NANOPARTICLES; SEMICONDUCTING INDIUM COMPOUNDS; SILICON WAFERS; SUSPENSIONS (FLUIDS);

THIN FILM TRANSISTORS;

EID: 84860746724     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/20/205303     Document Type: Article

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