Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors

Applied Surface Science

Volumn 258, Issue 8, 2012, Pages 3509-3512

  Kang, Jiyeon ^a   Moon, Kyeong Ju ^a   Lee, Tae Il ^a   Lee, Woong ^b   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b Changwon National University   (South Korea)

Author keywords

Amorphous semiconductors; Electromigration; Indium compounds; Thin film transistors

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ELECTRODES; ELECTROMIGRATION; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; TIN OXIDES; ZINC OXIDE;

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; CHANNEL LAYERS; COMPONENT ELEMENTS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; INDIUM TIN OXIDE ELECTRODES; METALLIC COMPONENT; METALLIC IONS; SWITCHING OPERATIONS;

THIN FILM CIRCUITS;

EID: 84856222410     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.11.104     Document Type: Article

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