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Volumn , Issue , 2011, Pages

A 220GHz subharmonic receiver front end in a SiGe HBT technology

Author keywords

heterojunction bipolar transistors; Millimeter wave receivers; MMIC frequency converters; silicon

Indexed keywords

CONVERSION GAIN; DIFFERENTIAL LNA; DOWN CONVERTERS; MILLIMETER WAVE RECEIVERS; MMIC FREQUENCY CONVERTERS; RECEIVER FRONT-ENDS; SIGE TECHNOLOGY; SIGE-HBT TECHNOLOGY; SUB-HARMONIC MIXER; SUBHARMONICS;

EID: 79960754237     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2011.5940604     Document Type: Conference Paper
Times cited : (21)

References (11)
  • 2
    • 79951833140 scopus 로고    scopus 로고
    • SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay, in
    • B. Heinemann et al., "SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay," in IEEE Intl. Electron Devices Meeting (IEDM), Dec. 2010, pp. 688-691.
    • IEEE Intl. Electron Devices Meeting (IEDM), Dec. 2010 , pp. 688-691
    • Heinemann, B.1
  • 6
    • 77952194721 scopus 로고    scopus 로고
    • A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz
    • U. R. Pfeiffer, E. Öjefors, and Y. Zhao, "A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz," in IEEE Int. Solid-State Circuits Conf., Feb. 2010, pp. 416-417.
    • IEEE Int. Solid-State Circuits Conf., Feb. 2010 , pp. 416-417
    • Pfeiffer, U.R.1    Öjefors, E.2    Zhao, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.