MOVPE III-V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Mukherjee, N ^a   Boardman, J ^a   Chu Kung, B ^a   Dewey, G ^a   Eisenbach, A ^b   Fastenau, J ^b   Kavalieros, J ^a   Liu, W K ^b   Lubyshev, D ^b   Metz, M ^a   Millard, K ^a   Radosavljevic, M ^a   Stewart, T ^b   Then, H W ^a   Tolchinsky, P ^a   Chau, R ^a  

^a INTEL CORPORATION   (United States)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GOLD STANDARDS; INP; LATTICE-MATCHED; LOGIC APPLICATIONS; LOW POWER; MATERIAL GROWTH; MATERIAL QUALITY; MBE GROWTH; SILICON SUBSTRATES;

ELECTRON DEVICES; GALLIUM;

SILICON;

EID: 84863074744     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131675     Document Type: Conference Paper

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