Heterojunction silicon wafer solar cells using amorphous silicon suboxides for interface passivation

Energy Procedia

Volumn 15, Issue , 2012, Pages 97-106

  Mueller, Thomas ^a   Wong, Johnson ^a   Aberle, Armin G ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

A SiO x; Amorphous silicon; Heterojunction; PECVD; Silicon wafer solar cells; Surface passivation

Indexed keywords

A-SIO X; AMORPHOUS NETWORKS; AMORPHOUS SILICON THIN FILMS; CELL EFFICIENCY; CELL RESEARCH; CONTACT FORMATION; CRYSTALLINE SILICON WAFERS; CRYSTALLINE SURFACES; DOPING EFFICIENCY; HETERO INTERFACES; HETEROJUNCTION CELLS; HIGH-EFFICIENCY SOLAR CELLS; HYDROGENATED AMORPHOUS SILICON FILMS; INTERFACE PASSIVATION; JAPANESE COMPANY; KEYPOINTS; NANOMETER THICKNESS; RECENT PROGRESS; SATURATION CURRENT DENSITIES; SELECTIVE EMITTERS; SILICON INTERLAYER; SURFACE PASSIVATION; SURFACE STATE DENSITY; WIDE BAND GAP;

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; EFFICIENCY; ENERGY GAP; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SILICON; SILICON OXIDES; THIN FILMS;

SILICON WAFERS;

EID: 84860501889     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.02.012     Document Type: Conference Paper

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