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Volumn , Issue , 2010, Pages 683-688

High efficiency silicon heterojunction solar cell using novel structure

Author keywords

[No Author keywords available]

Indexed keywords

HETERO INTERFACES; HETEROJUNCTION EMITTERS; HETEROJUNCTION SOLAR CELLS; HIGH CONDUCTIVITY; HIGH EFFICIENCY; HIGH QUALITY; HIGH TRANSPARENCY; NOVEL STRUCTURES; OPTIMUM TEMPERATURE; SILICON HETEROJUNCTIONS; SOLAR CELL FABRICATION; SURFACE PASSIVATION; SURFACE RECOMBINATIONS; WIDE GAP;

EID: 78650130006     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616901     Document Type: Conference Paper
Times cited : (8)

References (19)
  • 7
    • 35348914333 scopus 로고    scopus 로고
    • Investigation of the emitter band gap widening of heterojunction solar cells by use of hydrogenated amorphous carbon silicon alloys
    • T. Mueller, W. Duengen, Y. Ma, R. Job, M. Scherff, and W. R. Fahrner. Investigation of the emitter band gap widening of heterojunction solar cells by use of hydrogenated amorphous carbon silicon alloys. Journal of Applied Physics, vol. 102, p. 074505 (2007).
    • (2007) Journal of Applied Physics , vol.102 , pp. 074505
    • Mueller, T.1    Duengen, W.2    Ma, Y.3    Job, R.4    Scherff, M.5    Fahrner, W.R.6
  • 8
    • 38549092487 scopus 로고    scopus 로고
    • High quality passivation for heterojunction solar cells by hydrogenated amorphous silicon suboxide films
    • T. Mueller, S. Schwertheim, M. Scherff, and W. R. Fahrner. High quality passivation for heterojunction solar cells by hydrogenated amorphous silicon suboxide films. Applied Physics Letters, vol. 92, p. 033504 (2008).
    • (2008) Applied Physics Letters , vol.92 , pp. 033504
    • Mueller, T.1    Schwertheim, S.2    Scherff, M.3    Fahrner, W.R.4
  • 9
    • 34848825286 scopus 로고    scopus 로고
    • Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells
    • H. Fujiwara, T. Kaneko, and M. Kondo. Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells. Applied Physics Letters, vol. 91, p. 508 (2007).
    • (2007) Applied Physics Letters , vol.91 , pp. 508
    • Fujiwara, H.1    Kaneko, T.2    Kondo, M.3
  • 12
    • 34547093404 scopus 로고    scopus 로고
    • Model for aSi: H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
    • S. Olibet, E. Vallat-Sauvain, and C. Ballif. Model for aSi: H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds. Physical Review B, vol. 76, pp.3261-32614 (2007).
    • (2007) Physical Review B , vol.76 , pp. 3261-32614
    • Olibet, S.1    Vallat-Sauvain, E.2    Ballif, C.3
  • 15
    • 33947309716 scopus 로고    scopus 로고
    • Effects of a-Si:H layer thickness on the performance of a-Si:H/c-Si heterojunction solar cells
    • H. Fujiwara and M. Kondo. Effects of a-Si:H layer thickness on the performance of a-Si:H/c-Si heterojunction solar cells. Journal of Applied Physics, vol. 101, p. 054516 (2007).
    • (2007) Journal of Applied Physics , vol.101 , pp. 054516
    • Fujiwara, H.1    Kondo, M.2
  • 17
    • 75649096731 scopus 로고    scopus 로고
    • Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited nanocomposite silicon suboxides for solar cell applications
    • T. Mueller, S. Schwertheim, W. R. Fahrner, Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited nanocomposite silicon suboxides for solar cell applications, Journal of Applied Physics 107, 014504 (2010).
    • (2010) Journal of Applied Physics , vol.107 , pp. 014504
    • Mueller, T.1    Schwertheim, S.2    Fahrner, W.R.3
  • 18
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    • Ph.D. thesis, University of Hagen, LGBE
    • G. Grabosch, Ph.D. thesis, University of Hagen, LGBE (2000).
    • (2000)
    • Grabosch, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.