Silicon Germanium as a novel mask for silicon deep reactive ion etching

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2012, Pages 321-324

  Serry, M ^a,b   Ibrahim, M ^a   Sedky, S ^a  

^a AMERICAN UNIVERSITY IN CAIRO   (Egypt)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONCENTRATIONS; DEEP REACTIVE ION ETCHING; ETCHING SELECTIVITY; ETCHING TEMPERATURE; GE CONTENT; MASKING MATERIAL; P-TYPE; POLYCRYSTALLINE SILICON GERMANIUMS; PROCESSING TIME; SI-GE FILMS; SILICON GERMANIUM;

BORON; ELECTRONIC PROPERTIES; ETCHING; GERMANIUM; MEMS; POLYSILICON; SILICON ALLOYS; SILICON NITRIDE; SULFUR HEXAFLUORIDE;

SILICON OXIDES;

EID: 84860438301     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2012.6170159     Document Type: Conference Paper

References (13)

1. M. D. Henry, C. Welch, A. Scherer, "Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors", J. Vac. Sci. Technol. A, vol. 27, pp. 1211-1216, 2009.
2. L. Sainiemi and S. Franssila, "Mask material effects in cryogenic deep reactive ion etching", J. Vac. Sci. Technol. B, vol. 25, pp. 801-807, 2007.
3. M.J. Boer, J.G. Gardeniers, H.V. Jansen, E. Smulders, M. Gilde, G. Roelofs, J.N. Sasserath, M. Elwenspoek, "Guidelines for Etching Silicon MEMS Structures Using Fluorine High-Density Plasmas at Cryogenic Temperatures", J. of Microelectromech. Sys., vol. 11, pp. 385-401, 2002.
4. M. Boufnichel, P. Lefaucheux, S. Aachboun, R. Dussart, P. Ranson, "Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process", Microelectronic Eng., vol. 77, pp. 327-336, 2005.
5. B. A. Ganji, B. Y. Majlis, "Deep Trenches in Silicon Structure using DRIE Method with Aluminum as an Etching Mask", Proc. IEEE ICSE'06, Kuala Lumpur, Malaysia, pp. 41-47, 2006.
6. N. Schwesinger, I. Hotovy, T. Saendig, A. Pelzus, "The influence of gas composition and mask materials on the etch profile of dry etched structures in silicon", Proc. SPIE, vol. 2879, pp. 65-72, 1996.
7. M.D. Henry, S. Walavalkar, A. Homyk, A. Scherer, "Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars", Nanotechnology, vol. 20, pp. 255305-255308, 2009.
8. S. Sedky, A. Bayoumy, A. Alaa, A. Nagy, A. Witvrouw, "Optimal Conditions for Micromachining Si1-x Gex at 210°C", J. Microelectromech. Syst., vol. 16, pp. 581-588, 2007.
9. H. Janseny, H. Gardeniers, M. de Boer, M. Elwenspoek, J. Fluitman, "A survey on the reactive ion etching of silicon in microtechnology", J. Micromech. Microeng., vol. 6, pp. 14-28, 1996.
10. M. Decouzon, J. F. Gal, J. Gayraud, P. C. Maria, G. A. Vaglio, P. Volpe, "Fourier transform-ion cyclotron resonance study of the gas-phase acidities of germane and methylgermane; bond dissociation energy of germane", J. Am. Soc. Mass Spect., vol. 4, pp. 54-57, 1993.
11. 3 gate dielectrics on fully depleted SiGe on insulator", J. Vac. Sci. Technol. A, vol. 24, pp. 1151-1155, 2006.
12. Y. H. Lee, M. Chen, A. A. Bright, "Doping effects in reactive plasma etching of heavily doped silicon", J. Appl. Phys. Lett., vol. 46, pp. 260-262, 1985.
13. C. J. Mogab, H. J. Levinstein, "Anisotropic plasma etching of polysilicon", J. Vac. Sci. Technol., vol. 17, pp. 721-262, 1980.