Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1151-1155

  Di, Zengfeng ^a   Zhang, Miao ^b   Liu, Weili ^b   Shen, Qinwo ^b   Luo, Suhua ^a   Song, Zhitang ^b   Lin, Chenglu ^b   Chu, Paul K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; ELECTRIC PROPERTIES; INSULATING MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

FLATBAND VOLTAGE (VFB); GATE DIELECTRIC; THERMAL ANNEALING;

DIELECTRIC MATERIALS;

EID: 33744828714     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2190657     Document Type: Article

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