Deep trenches in silicon structure using DRIE method with aluminum as an etching mask

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2006, Pages 41-47

  Ganji, Bahram Azizollah ^b   Majlis, Burhanuddin Yeop ^a,b  

^a IEEE

^b INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN   (Malaysia)

Author keywords

Al mask; Deep trench; DRIE; Etch rate; Selectivity; Silicon structure

Indexed keywords

CRYOGENICS; MASKS; MEMS; MICROPHONES; SILICON; SULFUR HEXAFLUORIDE;

DEEP REACTIVE ION ETCHING (DRIE); DEEP TRENCHS; ETCH RATE; SILICON STRUCTURES;

ANISOTROPIC ETCHING;

EID: 35148818733     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2006.381016     Document Type: Conference Paper

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