Design Rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection

Advanced Materials

Volumn 24, Issue 17, 2012, Pages 2259-2262

  Son, Jun Ho ^a   Kim, Jong Uk ^a   Song, Yang Hee ^a   Kim, Buem Joon ^a   Ryu, Chul Jong ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

finite difference time domain (FDTD); nanosphere lithography; nanostructure; total internal reflection; vertical structure light emitting diodes (V LEDs)

Indexed keywords

CONE-SHAPED; DESIGN RULES; ETCHING MASKS; FINITE DIFFERENCE TIME-DOMAIN; HEXAGONAL PYRAMIDS; LIGHT OUTPUT POWER; NANO SPHERE LITHOGRAPHY; PHOTOCHEMICAL ETCHING; SIDEWALL ANGLES; TOTAL INTERNAL REFLECTIONS;

ETCHING; FINITE DIFFERENCE TIME DOMAIN METHOD; LIGHT EMISSION; NANOSPHERES; NANOSTRUCTURES; REFRACTIVE INDEX;

LIGHT EMITTING DIODES;

NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; LIGHT; SEMICONDUCTOR;

LIGHT; NANOSTRUCTURES; SEMICONDUCTORS; SILICON DIOXIDE;

EID: 84860337136     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201104648     Document Type: Article

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