Nanosphere lithography for the fabrication of ultranarrow graphene nanoribbons and on-chip bandgap tuning of graphene

Advanced Materials

Volumn 23, Issue 10, 2011, Pages 1246-1251

  Liu, Lei ^a   Zhang, Yingli ^a   Wang, Wenlong ^a   Gu, Changzhi ^a   Bai, Xuedong ^a   Wang, Enge ^b  

^a INSTITUTE OF PHYSICS   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

bandgap tuning; graphene; nanoribbons; nanosphere lithography

Indexed keywords

BAND-GAP TUNING; GRAPHENE NANORIBBONS; HIGH-THROUGHPUT; INNOVATIVE APPROACHES; LOW COST FABRICATION; LOW POWER; NANOPATTERNING; NANORIBBONS; NANOSPHERE LITHOGRAPHY; ON CHIPS; ON-CHIP FABRICATION;

ENERGY GAP; FABRICATION; LITHOGRAPHY; NANOSPHERES; PLASMA ETCHING;

GRAPHENE;

CARBON NANOTUBE; GRAPHITE; OXIDE; OXYGEN;

ARTICLE; CHEMISTRY; TEMPERATURE; ULTRASTRUCTURE;

GRAPHITE; NANOTUBES, CARBON; OXIDES; OXYGEN; TEMPERATURE;

EID: 79952402082     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201003847     Document Type: Article

References (41)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Science 2004, 306, 666.
2. K. S. Novoselov, A. K. Geim, Nat. Mater. 2007, 6, 183.
3. A. Cresti, N. Nemec, B. Biel, G. Niebler, F. Triozon, G. Cuniberti, S. Roche, Nano Res. 2008, 1, 36.
4. Y. W. Son, M. L. Cohen, S. G. Louie, Phys. Rev. Lett. 2006, 97, 216803.
5. M. Y. Han, B. Ozyilmaz, Y. B. Zhang, P. Kim, Phys. Rev. Lett. 2007, 98, 206805.
6. Z. H. Chen, Y. M. Lin, M. J. Rooks, P. Avouris, Physica E 2007, 40, 228.
7. X. L. Li, X. R. Wang, L. Zhang, S. W. Lee, H. J. Dai, Science 2008, 319, 1229.
8. D. V. Kosynkin, A. L. Higginbotham, A. Sinitskii, J. R. Lomeda, A. Dimiev, B. K. Price, J. M. Tour, Nature 2009, 458, 872.
9. L. Y. Jiao, L. Zhang, X. R. Wang, G. Diankov, H. J. Dai, Nature 2009, 458, 877.
10. L. Y. Jiao, X. R. Wang, G. Diankov, H. L. Wang, H. J. Dai, Nat. Nanotechnol. 2010, 5, 321.
11. J. W. Bai, X. F. Duan, Y. Huang, Nano Lett. 2009, 9, 2083.
12. J. W. Bai, X. Zhong, S. Jiang, Y. Huang, X. F. Duan, Nat. Nanotechnol. 2010, 5, 190.
13. M. Kim, N. S. Safron, E. Han, M. S. Arnold, P. Gopalan, Nano Lett. 2010, 10, 1125.
14. X. G. Liang, Y. S. Jung, S. W. Wu, A. Ismach, D. L. Olynick, S. Cabrini, J. Bokor, Nano Lett. 2010, 10, 2454.
15. a) J. C. Hulteen, R. P. Van Duyne, J. Vac. Sci. Technol. A 1995, 13, 1553
16. b) X. Y. Zhang, A. V. Whitney, J. Zhao, E. M. Hicks, R. P. Van Duyne, J. Nanosci. Nanotechnol. 2006, 6, 1920.
17. C. X. Cong, T. Yu, Z. H. Ni, L. Liu, Z. X. Shen, W. Huang, J. Phys. Chem. C 2009, 113, 6529.
18. N. I. Kovtyukhova, P. J. Ollivier, B. R. Martin, T. E. Mallouk, S. A. Chizhik, E. V. Buzaneva, A. D. Gorchinskiy, Chem. Mater. 1999, 11, 771.
19. S. Gilje, S. Han, M. Wang, K. L. Wang, R. B. Kaner, Nano Lett. 2007, 7, 3394.
20. C. Gomez-Navarro, R. T. Weitz, A. M. Bittner, M. Scolari, A. Mews, M. Burghard, K. Kern, Nano Lett. 2007, 7, 3499.
21. V. C. Tung, M. J. Allen, Y. Yang, R. B. Kaner, Nat. Nanotechnol. 2009, 4, 25.
22. Z. T. Luo, Y. Lu, L. A. Somers, A. T. C. Johnson, J. Am. Chem. Soc. 2009, 131, 898.
23. F. Burmeister, C. Schafle, T. Matthes, M. Bohmisch, J. Boneberg, P. Leiderer, Langmuir 1997, 13, 2983.
24. A. Kosiorek, W. Kandulski, H. Glaczynska, M. Giersig, Small 2005, 1, 439.
25. J. Rybczynski, D. Banerjee, A. Kosiorek, M. Giersig, Z. F. Ren, Nano Lett. 2004, 4, 2037.
26. a) T. Brintlinger, Y. F. Chen, T. Durkop, E. Cobas, M. S. Fuhrer, J. D. Barry, J. Melngailis, Appl. Phys. Lett. 2002, 81, 2454
27. b) A. Vijayaraghavan, S. Blatt, C. Marquardt, S. Dehm, R. Wahi, F. Hennrich, R. Krupke, Nano Res. 2008, 1, 321.
28. An even lower plasma power than 30 W was found to lead to unstable and irreproducible plasmas, for our current etching instrument.
29. L. Q. Yuan, X. X. Zhong, K. Ostrikov, Nanotechnology 2008, 19, 155304.
30. A. Kosiorek, W. Kandulski, P. Chudzinski, K. Kempa, M. Giersig, Nano Lett. 2004, 4, 1359.
31. X. X. Zhang, D. F. Liu, L. H. Zhang, W. L. Li, M. Gao, W. J. Ma, Y. Ren, Q. S. Zeng, Z. Q. Niu, W. Y. Zhou, S. S. Xie, J. Mater. Chem. 2009, 19, 962.
32. L. R. Radovic, B. Bockrath, J. Am. Chem. Soc. 2005, 127, 5917.
33. D. E. Jiang, B. G. Sumpter, S. Dai, J. Chem. Phys. 2007, 126, 134701.
34. P. Nemes-Incze, G. Magda, K. Kamaras, L. P. Biro, Nano Res. 2010, 3, 110.
35. Y. D. Yin, Y. Lu, B. Gates, Y. N. Xia, J. Am. Chem. Soc. 2001, 123, 8718.
36. Y. D. Yin, Y. N. Xia, J. Am. Chem. Soc. 2003, 125, 2048.
37. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, A. K. Geim, Phys. Rev. Lett. 200 6, 97, 187401.
38. Note that as compared to the chemically derived graphene sheets, the mechanically cleaved graphene flakes are more resistant to plasma etching and thus necessitated a longer etching time than that for chemically derived graphene specimens.
39. A. K. Gupta, T. J. Russin, H. R. Gutierrez, P. C. Eklund, ACS Nano 2009, 3, 45.
40. M. Evaldsson, I. V. Zozoulenko, H. Y. Xu, T. Heinzel, Phys. Rev. B 2008, 78, 161407.
41. F. Sols, F. Guinea, A. H. Castro Neto, Phys. Rev. Lett. 2007, 99, 166803.