Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD

Journal of Magnetism and Magnetic Materials

Volumn 324, Issue 16, 2012, Pages 2539-2542

  Souissi, M ^a   Schmerber, G ^b   Derory, A ^b   El Jani, B ^c  

^a Higher Institute of Computer Sciences and Communication Techniques of Hammam Sousse   (Tunisia)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^c FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

GaN:V; Magnetic material; Metal organic chemical vapor deposition

Indexed keywords

AS-GROWN; C-SAPPHIRE; ELECTRON CONCENTRATION; FERROMAGNETIC PROPERTIES; GAN THIN FILMS; GAN:V; HIGH-TEMPERATURE ANNEALING; ROOM TEMPERATURE; SECONDARY MAGNETIC PHASIS; STRUCTURE CHARACTERIZATION; ZERO-FIELD-COOLED MAGNETIZATIONS;

CURIE TEMPERATURE; MAGNETIC MATERIALS; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SAPPHIRE; SURFACE ROUGHNESS; VANADIUM; VAPORS; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84860296708     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2012.03.039     Document Type: Article

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