Effect of carrier gas on the surface morphology of V-doped GaN layers

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1521-1524

  Souissi, M ^a   Touati, H ^a   Fouzri, A ^a   Bchetnia, A ^a   Jani, B El ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

GaN; Metalorganic chemical vapour deposition; PL; SEM; Vanadium; XRD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CORUNDUM; CRYSTAL GROWTH; GALLIUM NITRIDE; GRAIN BOUNDARIES; HYDROGEN; LIGHT EMISSION; LUMINESCENCE; MICROSCOPIC EXAMINATION; SAPPHIRE; SECONDARY EMISSION; SEMICONDUCTING GALLIUM; SILANES; SILICON NITRIDE; SUBSTRATES; SURFACE MORPHOLOGY; TRANSITION METALS; VANADIUM ALLOYS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

GAN; METALORGANIC CHEMICAL VAPOUR DEPOSITION; PL; SEM; XRD;

GALLIUM ALLOYS;

EID: 56049094593     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.04.004     Document Type: Article

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