Near-infrared photoluminescence of V-doped GaN

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1457-1460

  Touati, H ^a   Souissi, M ^a   Chine, Z ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

GaN; MOVPE; Photoluminescence; Vanadium

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; INFRARED DEVICES; INFRARED SPECTROSCOPY; LIGHT EMISSION; LUMINESCENCE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SILICON NITRIDE; TRANSITION METALS; VANADIUM; VANADIUM ALLOYS; VAPOR PHASE EPITAXY;

BLUE EMISSION BANDS; CHARGE STATES; FINE STRUCTURES; GAN; GROWTH PROCESSES; IN-SITU; INFRARED LUMINESCENCES; INFRARED PHOTOLUMINESCENCES; LASER REFLECTOMETRY; METALORGANIC VAPOUR PHASE EPITAXIES; MOVPE; PHONON LINES; RAMAN PROCESSES; ROOM TEMPERATURES; SAPPHIRE SUBSTRATES; SATELLITE LINES; SHIFT ANDS; VISIBLE SPECTRAL RANGES;

GALLIUM ALLOYS;

EID: 56049100015     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.04.008     Document Type: Article

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