Effect of nanocavities on the thermoelectric properties of polycrystalline silicon

Materials Research Society Symposium Proceedings

Volumn 1329, Issue , 2011, Pages 95-100

  Selezneva, Ekaterina ^a   Arcari, Andrea ^a   Pernot, Gilles ^b   Romano, Elisabetta ^a   Cerofolini, Gianfranco ^a   Tonini, Rita ^c   Frabboni, Stefano ^c   Ottaviani, Giampiero ^c   Shakouri, Ali ^b   Narducci, Dario ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b University of California Santa Cruz   (United States)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DOPING LEVELS; ELECTRICAL CONDUCTIVITY; FIGURE OF MERITS; NANO-CAVITIES; NANO-STRUCTURING; POLYCRYSTALLINE SILICON FILMS; POWER FACTORS; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ELECTRONIC PROPERTIES; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTOR DOPING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 84860207614     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.1465     Document Type: Conference Paper

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