Origin of preferential grain orientation in excimer laser-induced crystallization of silicon thin films

Applied Physics Letters

Volumn 100, Issue 16, 2012, Pages

  Weizman, M ^a   Klimm, C ^a   Nickel, N H ^a   Rech, B ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL VALUE; EXCIMERS; GRAIN ORIENTATION; GRAIN TEXTURES; LASER-INDUCED CRYSTALLIZATION; LAYER THICKNESS; POLYCRYSTALLINE SILICON THIN FILM; SILICON LAYER; SILICON THIN FILM; SOLIDIFICATION PROCESS; SURFACE ENERGY ANISOTROPY; TEXTURE FORMATION;

EXCIMER LASERS; GRAIN GROWTH; POLYCRYSTALLINE MATERIALS; POLYSILICON; THIN FILMS;

TEXTURES;

EID: 84859980702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704559     Document Type: Article

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