Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1606-1609

  Shtinkov, N ^a   Turcotte, S ^a   Beaudry, J N ^a   Desjardins, P ^a   Masut, R A ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BOUND STATES; OPTICAL TRANSITIONS; TIGHT-BINDING CALCULATIONS;

COMPUTER SIMULATION; CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; HAMILTONIANS; HETEROJUNCTIONS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4344616482     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1764814     Document Type: Conference Paper

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