Simulation study of channel mobility and device performance dependence on gate stack in graphene field-effect transistors

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Zhu, Weinan ^a   Zhang, Jinyu ^a   Yu, Zhiping ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; CHARGED IMPURITY; COULOMB SCATTERING; DEVICE PERFORMANCE; GATE STACKS; MODEL CALCULATIONS; SCATTERING MECHANISMS; SIMULATION STUDIES; THEORETICAL MODELS;

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; TRANSCONDUCTANCE;

GRAPHENE;

EID: 84859940214     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3693410     Document Type: Article

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