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Volumn 13, Issue 6, 2012, Pages 999-1003

Organic field-effect transistors based on J-aggregate thin films of a bisazomethine dye

(9) Ribierre, J C a,b Sato, M c Ishizuka, A a,c Tanaka, T d Watanabe, S e Matsumoto, M e Matsumoto, S c Uchiyama, M a Aoyama, T a

a RIKEN (Japan)

b Ewha Womans University (South Korea)

c YOKOHAMA NATIONAL UNIVERSITY (Japan)

d SUMITOMO CHEMICAL CO LTD (Japan)

e TOKYO UNIVERSITY OF SCIENCE (Japan)

Author keywords

Bisazomethine dye; J aggregates; Organic field effect transistor; Thickness dependence

Indexed keywords

AGGREGATES; INTERFACES (MATERIALS); THIN FILM CIRCUITS; THIN FILMS; TRANSISTORS; TRANSPORT PROPERTIES;

BISAZOMETHINE DYES; ELECTRICAL CHARACTERISTIC; HOLE FIELD EFFECT MOBILITY; J AGGREGATES; J-AGGREGATE FORMATION; ORGANIC ELECTRONIC DEVICES; SOLVENT VAPOR TREATMENT; THICKNESS DEPENDENCE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84859914467 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2012.02.020 Document Type: Article

Times cited : (24)

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