GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer

IEEE Photonics Technology Letters

Volumn 24, Issue 10, 2012, Pages 815-817

  Lin, Nan Ming ^a   Shei, Shih Chang ^b   Chang, Shoou Jinn ^a   Zeng, Xu Feng ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Ag; GaN; light emitting diodes; SiO 2

Indexed keywords

CURRENT INJECTIONS; CURRENT SPREADING; FORWARD VOLTAGE; GAN; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; OUTPUT POWER; SIO 2;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; SILVER;

LIGHT EMITTING DIODES;

EID: 84859885322     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2188789     Document Type: Article

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