Oriented growth of Al 2O 3:ZnO nanolaminates for use as electron-selective electrodes in inverted polymer solar cells

Advanced Functional Materials

Volumn 22, Issue 7, 2012, Pages 1531-1538

  Cheun, Hyeunseok ^a   Fuentes Hernandez, Canek ^a   Shim, Jaewon ^a   Fang, Yunnan ^b   Cai, Ye ^b   Li, Hong ^c   Sigdel, Ajaya K ^d   Meyer, Jens ^e   Maibach, Julia ^e   Dindar, Amir ^a   Zhou, Yinhua ^a   Berry, Joseph J ^d   Bredas, Jean Luc ^c   Kahn, Antoine ^e   Sandhage, Kenneth H ^b   Kippelen, Bernard ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^e Princeton University   (United States)

Author keywords

Al 2O 3:ZnO nanolaminates; atomic layer deposition; inverted organic solar cells; oriented growth

Indexed keywords

ACTIVE LAYER; CRYSTAL ALIGNMENT; DEPOSITION CYCLES; DOPING LEVELS; ELECTRICAL CONDUCTIVITY; FILM COMPOSITION; INVERTED ORGANIC SOLAR CELLS; LOW WORK FUNCTION; METHYL ESTERS; NANO-LAMINATES; ORIENTED GROWTH; POLY-3-HEXYLTHIOPHENE; POLYMER SOLAR CELLS; POWER CONVERSION EFFICIENCIES; VISIBLE REGION; ZNO CRYSTALS; ZNO FILMS;

ALUMINUM; ATOMIC LAYER DEPOSITION; CONVERSION EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRODES; METALLIC FILMS; POLYMERS; SEMICONDUCTOR DOPING; SOLAR CELLS;

ZINC OXIDE;

EID: 84859587934     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201102968     Document Type: Article

References (38)

1. C. Waldauf, M. Morana, P. Denk, P. Schilinsky, K. Coakley, S. A. Choulis, C. J. Brabec, Appl. Phys. Lett. 2006, 89, 233517.
2. M. S. White, D. C. Olson, S. E. Shaheen, N. Kopidakis, D. S. Ginley, Appl. Phys. Lett. 2006, 89, 143517.
3. G. Li, C.-W. Chu, V. Shrotriya, J. Huang, Y. Yang, Appl. Phys. Lett. 2006, 88, 253503.
4. S. K. Hau, H. L. Yip, N. S. Baek, J. Y. Zou, K. O'Malley, A. K. Y. Jen, Appl. Phys. Lett. 2008, 92, 253301.
5. H. Cheun, J. B. Kim, Y. H. Zhou, Y. N. Fang, A. Dindar, J. Shim, C. Fuentes-Hernandez, K. H. Sandhage, B. Kippelen, Opt. Express 2010, 18, A506.
6. H. Cheun, C. Fuentes-Hernandez, Y. H. Zhou, W. J. Potscavage, S. J. Kim, J. Shim, A. Dindar, B. Kippelen, J. Phys. Chem. C 2010, 114, 20713.
7. R. Po, C. Carbonera, A. Bernardi, N. Camaioni, Energy Environ. Sci. 2010, 4, 285.
8. A. Wagenpfahl, D. Rauh, M. Binder, C. Deibel, V. Dyakonov, Phys. Rev. B 2010, 82, 115306.
9. T. Kuwabara, Y. Kawahara, T. Yamaguchi, K. Takahashi, ACS Appl. Mater. Interfaces 2009, 1, 2107.
10. H. Kim, J. S. Horwitz, W. H. Kim, A. J. Mäkinen, Z. H. Kafafi, D. B. Chrisey, Thin Solid Films 2002, 420-421, 539.
11. K. Schulze, B. Maennig, K. Leo, Y. Tomita, C. May, J. Hupkes, E. Brier, E. Reinold, P. Bauerle, Appl. Phys. Lett. 2007, 91, 073521.
12. J. Meyer, P. Gorrn, S. Hamwi, H. H. Johannes, T. Riedl, W. Kowalsky, Appl. Phys. Lett. 2008, 93, 073308.
13. J. Owen, M. S. Son, K. H. Yoo, B. D. Ahn, S. Y. Lee, Appl. Phys. Lett. 2007, 90, 033512.
14. X. H. Zhang, B. Domercq, X. D. Wang, S. Yoo, T. Kondo, Z. L. Wang, B. Kippelen, Org. Electron. 2007, 8, 718.
15. W. J. Potscavage, S. Yoo, B. Domercq, B. Kippelen, Appl. Phys. Lett. 2007, 90, 253511.
16. P. Poodt, A. Lankhorst, F. Roozeboom, K. Spee, D. Maas, A. Vermeer, Adv. Mater. 2010, 22, 3564.
17. J. W. Elam, S. M. George, Chem. Mater. 2003, 15, 1020.
18. S. H. K. Park, J. I. Lee, C. S. Hwang, H. Y. Chu, Jpn. J. Appl. Phys. Part 2 2005, 44, L242.
19. S. H. K. Park, C. S. Hwang, H. Y. Jeong, H. Y. Chu, K. I. Cho, Electrochem. Solid State Lett. 2008, 11, H10.
20. J. W. Elam, D. Routkevitch, S. M. George, J. Electrochem. Soc. 2003, 150, G339.
21. J. S. Na, G. Scarel, G. N. Parsons, J. Phys. Chem. C 2010, 114, 383.
22. D. J. Lee, H. M. Kim, J. Y. Kwon, H. Choi, S. H. Kim, K. B. Kim, Adv. Funct. Mater. 2011, 21, 448.
23. U. Ozgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, H. Morkoc, J. Appl. Phys. 2005, 98, 103.
24. W. C. Shih, H. Y. Su, M. S. Wu, Thin Solid Films 2009, 517, 3378.
25. R. Jackson, S. Graham, Appl. Phys. Lett. 2009, 94, 012109.
26. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, T. Steiner, J. Vac. Sci. Technol. B 2004, 22, 932.
27. V. Srikant, D. R. Clarke, J. Appl. Phys. 1998, 83, 5447.
28. E. Burstein, Phys. Rev. 1954, 93, 632.
29. T. S. Moss, Proc. Phys. Soc. London Sect. B 1954, 67, 775.
30. G. G. Valle, P. Hammer, S. H. Pulcinelli, C. V. Santilli, J. Eur. Ceram. Soc. 2004, 24, 1009.
31. E. O. Kane, Phys. Rev. B 1978, 18, 6849.
32. J. Hwang, A. Wan, A. Kahn, Mater. Sci. Eng. R 2009, 64, 1.
33. G. Kresse, J. Furthmüller, Phys. Rev. B 1996, 54, 11169.
34. G. Kresse, J. Furthmüller, Comput. Mater. Sci. 1996, 6, 15.
35. P. E. Blöchl, Phys. Rev. B 1994, 50, 17953.
36. J. P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 1996, 77, 3865.
37. S. L. Dudarev, G. A. Botton, S. Y. Savrasov, C. J. Humphreys, A. P. Sutton, Phys. Rev. B 1998, 57, 1505.
38. P. Palacios, K. Sánchez, P. Wahnón, Thin Solid Films 2009, 517, 2448.