High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1161-1163

  Yu, Hyun Yong ^a   Ren, Shen ^a   Jung, Woo Shik ^a   Okyay, Ali K ^b   Miller, David A B ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

Germanium; Photodiode; Selective; Strain; Tensile

Indexed keywords

ABSORPTION EDGES; ENHANCED EFFICIENCY; HETEROEPITAXY; HIGH EFFICIENCY; HYDROGEN ANNEALING; MONOLITHIC INTEGRATION; MONOLITHICALLY INTEGRATED; NEAR INFRARED; NORMAL INCIDENCE; ON CHIPS; OPTIMAL ANTIREFLECTION; P-I-N PHOTODETECTORS; PIN PHOTODIODE; RESIDUAL TENSILE STRAIN; SELECTIVE; TENSILE;

ANTIREFLECTION COATINGS; EPITAXIAL GROWTH; GERMANIUM; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES;

TENSILE STRAIN;

EID: 70350618469     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2030905     Document Type: Article

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