Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Hanke, Michael ^a   Kaganer, Vladimir M ^a   Bierwagen, Oliver ^a   Niehle, Michael ^a   Trampert, Achim ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ENERGY FORMING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

BIXBYITE STRUCTURE; CRYSTALLINE FILMS; HIGH RESOLUTION X RAY DIFFRACTION; IN-SITU X-RAY DIFFRACTION; MODEL CALCULATIONS; REAL TIME; SI (1 1 1); ULTRA-THIN;

GADOLINIUM COMPOUNDS;

EID: 84859393265     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-203     Document Type: Article

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