Structure analysis of epitaxial Gd2O3/Si(0 0 1) for high-k gate dielectric applications

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2179-2182

  Watahiki, Tatsuro ^a   Jenichen, Bernd ^a   Shayduk, Roman ^a   Tinkham, Brad P ^a   Braun, Wolfgang ^a   Riechert, Henning ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Oxides; B2. Dielectric materials

Indexed keywords

CRYSTAL GROWTH; DIFFRACTION; GADOLINIUM; GATE DIELECTRICS; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OXYGEN; PHASE INTERFACES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICIDES; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

A1. X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B1. OXIDES; B2. DIELECTRIC MATERIALS; CRYSTALLINITY; GRAZING INCIDENCE X-RAY DIFFRACTIONS; HIGH QUALITIES; HIGH-K GATE DIELECTRICS; OXYGEN PARTIAL PRESSURES; OXYGEN PRESSURES; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONS; SI(0 0 1); SILICIDE PHASE; STRUCTURE ANALYSIS; SUBSTRATE TEMPERATURES;

DIELECTRIC MATERIALS;

EID: 63349085827     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.012     Document Type: Article

References (11)

1. Adachi G., and Imanaka N. Chem. Rev. 98 (1998) 1479
2. Czernohorsky M., Bugiel E., Osten H.J., Fissel A., and Kirfel O. Appl. Phys. Lett. 88 (2006) 152905
3. Badylevich M., Shamuilia S., Afanas'ev V.V., Stesmans A., Laha A., Osten H.J., and Fissel A. Appl. Phys. Lett. 90 (2007) 252101
4. Hattori T., Yoshida T., Shiraishi T., Takahashi K., Nohira H., Joumori S., Nakajima K., Suzuki M., Kimura K., Kashiwagi I., Ohshima C., Ohmi S., and Iwai H. Microelectron. Eng. 72 (2004) 283
5. T. Watahiki, W. Braun, H. Riechert, J. Vac. Sci. Technol., to be published.
6. Jenichen B., Braun W., Kaganer V.M., Shtukenberg A.G., Däweritz L., Schulz C.G., Ploog K.H., and Erko A. Rev. Sci. Instrum. 74 (2003) 1267
7. T. Watahiki, B.P. Tinkham, B. Jenichen, R. Shayduk, W. Braun, K.H. Ploog, Appl. Surf. Sci., 255 (2008) 758
8. Guo X., Braun W., Jenichen B., and Ploog K.H. J. Crystal Growth 290 (2006) 73
9. Wakiya N., Chun S.-Y., Saiki A., Sakurai O., Shinozaki K., and Mizutani N. Thermochim. Acta 313 (1998) 55
10. Czernohorsky M., Tetzlaff D., Bugiel E., Dargis R., Osten H.J., Gottlob H.D.B., Schmidt M., Lemme M.C., and Kurz H. Semicond. Sci. Technol. 23 (2008) 035010
11. Rudenko V.S., and Boganov A.G. Inorg. Mater. 6 (1970) 1893