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Volumn 85, Issue 12, 2012, Pages

Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors

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EID: 84859231292     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.121307     Document Type: Article
Times cited : (28)

References (33)
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