Microwave resonances in low-filling insulating phase of two-dimensional electron system

Solid State Communications

Volumn 104, Issue 3, 1997, Pages 167-171

  Engel, L W ^a   Li, C C ^b   Shahar, D ^b   Tsui, D C ^b   Shayegan, M ^b  

^a FLORIDA STATE UNIVERSITY   (United States)

^b Princeton University   (United States)

Author keywords

A. Heterojunctions; D. Fractional quantum Hall effect; D. Quantum localization

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC INSULATING MATERIALS; HALL EFFECT; QUANTUM THEORY; RESONANCE; THERMAL EFFECTS;

FUKUYAMA LEE MODEL; QUANTUM LOCALIZATION; WIGNER CRYSTALS;

HETEROJUNCTIONS;

EID: 0031259431     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00302-5     Document Type: Article

References (37)

1. Tsui, D.C., Stormer, H.L. and Gossard, A.C., Phys. Rev. Lett., 48, 1982, 1559.
2. Lozovik, Y.E. and Yudson, V.I., JETP Lett., 22, 1975, 11; Lam, P.K. and Girvin, S.M., Phys. Rev. B30, 1984, 473; Levesque, D., Weis, J.J. and McDonald, A.H., Phys. Rev., B30, 1984, 1056.
3. Lozovik, Y.E. and Yudson, V.I., JETP Lett., 22, 1975, 11; Lam, P.K. and Girvin, S.M., Phys. Rev. B30, 1984, 473; Levesque, D., Weis, J.J. and McDonald, A.H., Phys. Rev., B30, 1984, 1056.
4. Lozovik, Y.E. and Yudson, V.I., JETP Lett., 22, 1975, 11; Lam, P.K. and Girvin, S.M., Phys. Rev. B30, 1984, 473; Levesque, D., Weis, J.J. and McDonald, A.H., Phys. Rev., B30, 1984, 1056.
5. Goldman, V.J. et al., Phys. Rev. Lett., 65, 1990, 2189.
6. Li, Y.P. et al., Phys. Rev. Lett., 67, 1991, 1630.
7. Li, Y.P. et al., Solid State Commun., 95, 1995, 619.
8. Li, Y.P. et al., Solid State Commun., 96, 1995, 379; Li, Y.P. et al., Solid State Commun., in press.
9. Li, Y.P. et al., Solid State Commun., 96, 1995, 379; Li, Y.P. et al., Solid State Commun., in press.
10. Andrei, E. Y. et al., Phys. Rev. Lett., 60, 1988, 2765; Williams, F.I.B. et al., Phys. Rev. Lett., 66, 1991, 3285; For data on increase of resonance frequency with B see Williams, F.I.B. et al., in Localization and Confinement of Electrons in Semiconductors (Edited by F. Kuchar, H. Heinrich and G. Bauer), Springer-Verlag, Berlin, 1990.
11. Andrei, E. Y. et al., Phys. Rev. Lett., 60, 1988, 2765; Williams, F.I.B. et al., Phys. Rev. Lett., 66, 1991, 3285; For data on increase of resonance frequency with B see Williams, F.I.B. et al., in Localization and Confinement of Electrons in Semiconductors (Edited by F. Kuchar, H. Heinrich and G. Bauer), Springer-Verlag, Berlin, 1990.
12. Andrei, E. Y. et al., Phys. Rev. Lett., 60, 1988, 2765; Williams, F.I.B. et al., Phys. Rev. Lett., 66, 1991, 3285; For data on increase of resonance frequency with B see Williams, F.I.B. et al., in Localization and Confinement of Electrons in Semiconductors (Edited by F. Kuchar, H. Heinrich and G. Bauer), Springer-Verlag, Berlin, 1990.
13. Paalanen, MA. et al., Phys. Rev., B45, 1992, 11342; Paalanen, M.A. et al.,
14. Paalanen, MA. et al., Phys. Rev., B45, 1992, 11342; Paalanen, M.A. et al.,
15. ibid. B45, 1992, 13784;
16. Willett, R.L., in Physics of the Electron Solid (Edited by S.T. Chui), International Press, Boston, 1994.
17. For example, Buhmann, H. et al., Phys. Rev. Lett., 66, 1991, 926; Goldys, E.M. et al., Phys. Rev., B46, 1992, 7957; Kukushkin, I.V. et al., ibid., B45, 1992, 4532.
18. For example, Buhmann, H. et al., Phys. Rev. Lett., 66, 1991, 926; Goldys, E.M. et al., Phys. Rev., B46, 1992, 7957; Kukushkin, I.V. et al., ibid., B45, 1992, 4532.
19. For example, Buhmann, H. et al., Phys. Rev. Lett., 66, 1991, 926; Goldys, E.M. et al., Phys. Rev., B46, 1992, 7957; Kukushkin, I.V. et al., ibid., B45, 1992, 4532.
20. Shayegan, M., chapter in Novel Quantum Liquids in Low-Dimensional Semiconductor Structures (Edited by S. Das Sarma and A. Pinczuk), Wiley, New York, 1996.
21. Kivelson, S., Lee, D.-H. and Zhang, S.-C., Phys. Rev. B, 46, 1992, 2223.
22. Shahar, D. et al., Phys. Rev. Lett. 74, 1995, 4511.
23. Fukuyama, H. and Lee, P.A., Phys. Rev. B17, 1978, 535; ibid., B18, 1978, 6245.
24. Fukuyama, H. and Lee, P.A., Phys. Rev. B17, 1978, 535; ibid., B18, 1978, 6245.
25. Jiang, H.W. et al., Phys. Rev. Lett., 65, 1990, 633; Phys. Rev., B44, 1991, 8107.
26. Jiang, H.W. et al., Phys. Rev. Lett., 65, 1990, 633; Phys. Rev., B44, 1991, 8107.
27. Engel, L.W., Shahar, D., Kurdak, Ç. and Tsui, D.C., Phys. Rev. Lett., 71, 1993, 2638.
28. Wen, C.P., IEEE Trans. Microwave Theory Tech., MTT-17, 1969, 1087.
29. Shahar, D., Tsui, D.C., Shayegan, M., Shimshoni, E. and Sondhi, S.L. Science 274, 1996, 589; Shahar, D., Ph.D. dissertation, Princeton University, 1996.
30. Shahar, D., Tsui, D.C., Shayegan, M., Shimshoni, E. and Sondhi, S.L. Science 274, 1996, 589; Shahar, D., Ph.D. dissertation, Princeton University, 1996.
31. Wei, H.P. et al., Phys. Rev. Lett., 61, 1988, 1294.
32. Merkt, U., Phys. Rev. Lett. 76, 1996, 1134.
33. Efros, A.L. and Shklovskii, B.I., in Electron-Electron Interactions in Disordered Systems (Edited by A.L. Efros and M. Pollak), North-Holland, Amsterdam, 1985, and references cited therein. For 2DES at high B see Polyakov, D.G. and Shklovskii, B.I., Surf. Sci., 305, 1994, 151.
34. Efros, A.L. and Shklovskii, B.I., in Electron-Electron Interactions in Disordered Systems (Edited by A.L. Efros and M. Pollak), North-Holland, Amsterdam, 1985, and references cited therein. For 2DES at high B see Polyakov, D.G. and Shklovskii, B.I., Surf. Sci., 305, 1994, 151.
35. Normand, B.G.A., Littlewood, P.B. and Millis, A.J., Phys. Rev. B, 46, 1992, 3920.
36. Millis, A.J. and Littlewood, P.B., Phys. Rev. B50, 1994, 17632.
37. Littlewood, P.B., Phys Rev. B36, 1987, 3108.