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Solid State Communications

Volumn 119, Issue 12, 2001, Pages 641-645

Experimental evidence for a spin-polarized ground state in the ν=5/2 fractional quantum Hall effect

(6) Pan, W a,b Stormer, H L c,d Tsui, D C a Pfeiffer, L N d Baldwin, K W d West, K W d

a Princeton University (United States)

b FLORIDA STATE UNIVERSITY (United States)

c Columbia University ^* (United States)

d LUCENT TECHNOLOGIES (United States)

Author keywords

C. field effect transistor; C. two dimensional electron system; D. quantum Hall effect

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; ENERGY GAP; GROUND STATE; JUNCTION GATE FIELD EFFECT TRANSISTORS; MAGNETIC FIELD EFFECTS;

FRACTIONAL QUANTUM HALL EFFECTS (FQHE);

HALL EFFECT;

EID: 0035812451 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(01)00311-8 Document Type: Article

Times cited : (54)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.