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Volumn 520, Issue 13, 2012, Pages 4497-4500

Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering

(2) Mešić, Biljana a,b Schroeder, Herbert a

Author keywords

Crystallization temperature; Electric resistivity; Oxygen diffusion barrier; Reactive sputtering; Tantalum silicon nitride; X ray diffraction

Indexed keywords

AS-DEPOSITED FILMS; CONDUCTIVE PROPERTIES; CRYSTALLIZATION TEMPERATURE; ELECTRICALLY CONDUCTIVE; HIGH PERMITTIVITY; METALLIC CONDUCTION; NITROGEN CONTENT; OHMIC BEHAVIOR; OXYGEN DIFFUSION BARRIER; REACTIVE RADIO-FREQUENCY MAGNETRON SPUTTERING;

DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; PLATINUM; RADIO WAVES; REACTIVE SPUTTERING; SILICON; SILICON NITRIDE; STOICHIOMETRY; X RAY DIFFRACTION;

THIN FILMS;

EID: 84859164450 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.02.068 Document Type: Article

Times cited : (7)

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