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Volumn 37, Issue 5 A, 1998, Pages 2646-2651
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Barrier metal properties of amorphous tantalum nitride thin films between platinum and silicon deposited using remote plasma metal organic chemical vapor method
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Author keywords
Amorphous thin film; Diffusion barrier; MOCVD; Plasma process; Tantalum nitride; Thermal stability
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Indexed keywords
AMORPHOUS MATERIALS;
CHEMICAL VAPOR DEPOSITION;
NITRIDES;
PLASMA SPRAYING;
THERMODYNAMIC STABILITY;
THIN FILMS;
DIFFUSION BARRIER;
TANTALUM COMPOUNDS;
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EID: 0032064518
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.2646 Document Type: Article |
Times cited : (17)
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References (12)
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