메뉴 건너뛰기




Volumn 37, Issue 5 A, 1998, Pages 2646-2651

Barrier metal properties of amorphous tantalum nitride thin films between platinum and silicon deposited using remote plasma metal organic chemical vapor method

Author keywords

Amorphous thin film; Diffusion barrier; MOCVD; Plasma process; Tantalum nitride; Thermal stability

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; NITRIDES; PLASMA SPRAYING; THERMODYNAMIC STABILITY; THIN FILMS;

EID: 0032064518     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2646     Document Type: Article
Times cited : (17)

References (12)
  • 10
    • 33645043712 scopus 로고    scopus 로고
    • Joint Committee for Power Diffraction Standards, Power Diffraction File No. 32-1283, 25-922, 408-3 and 4-0788
    • Joint Committee for Power Diffraction Standards, Power Diffraction File No. 32-1283, 25-922, 408-3 and 4-0788.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.