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Volumn 520, Issue 13, 2012, Pages 4305-4309
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Control of aluminum doping of ZnO:Al thin films obtained by high-power impulse magnetron sputtering
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Author keywords
Aluminum; Doping; Magnetron sputtering deposition; Pulsed magnetron discharge; Transparent electrodes; Zinc oxide
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Indexed keywords
AL-CONCENTRATION;
AL-DOPING;
ALUMINUM ELECTRODES;
CRYSTALLINE GRAIN SIZE;
ELECTRICAL CONDUCTIVITY;
ELECTRODE BIASING;
HIGH-POWER;
KEY PARAMETERS;
LASER ABSORPTION;
MAGNETRON DISCHARGES;
MAGNETRON SPUTTERING DEPOSITION;
OPTIMUM VALUE;
PULSED MAGNETRON DISCHARGES;
TRANSPARENT ELECTRODE;
VAPOR PHASE;
X-RAY PHOTOELECTRONS;
ZINC OXIDE (ZNO);
ZNO THIN FILM;
ZNO:AL FILMS;
ZNO:AL THIN FILMS;
ALUMINUM COATINGS;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
ELECTRIC DISCHARGES;
EMISSION SPECTROSCOPY;
MAGNETRON SPUTTERING;
METALLIC FILMS;
SEMICONDUCTOR DOPING;
ZINC OXIDE;
ALUMINUM;
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EID: 84859156272
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2012.02.079 Document Type: Article |
Times cited : (17)
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References (26)
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