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Volumn 520, Issue 13, 2012, Pages 4305-4309

Control of aluminum doping of ZnO:Al thin films obtained by high-power impulse magnetron sputtering

Author keywords

Aluminum; Doping; Magnetron sputtering deposition; Pulsed magnetron discharge; Transparent electrodes; Zinc oxide

Indexed keywords

AL-CONCENTRATION; AL-DOPING; ALUMINUM ELECTRODES; CRYSTALLINE GRAIN SIZE; ELECTRICAL CONDUCTIVITY; ELECTRODE BIASING; HIGH-POWER; KEY PARAMETERS; LASER ABSORPTION; MAGNETRON DISCHARGES; MAGNETRON SPUTTERING DEPOSITION; OPTIMUM VALUE; PULSED MAGNETRON DISCHARGES; TRANSPARENT ELECTRODE; VAPOR PHASE; X-RAY PHOTOELECTRONS; ZINC OXIDE (ZNO); ZNO THIN FILM; ZNO:AL FILMS; ZNO:AL THIN FILMS;

EID: 84859156272     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.02.079     Document Type: Article
Times cited : (17)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.