Effects of surface modification of the individual ZnO nanowire with oxygen plasma treatment

Materials Letters

Volumn 63, Issue 28, 2009, Pages 2516-2519

  Ra, H W ^a   Khan, R ^a   Kim, J T ^a   Kang, B R ^a   Bai, K H ^b   Im, Y H ^a  

^a Chonbuk National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

FETs; Nanowires; Plasma treatment; Sensors; ZnO

Indexed keywords

ELECTRICAL TRANSPORT MECHANISMS; FETS; GAS SENSITIVITY; HYDROGEN GAS; OXYGEN PLASMA TREATMENTS; PHOTOCURRENT RESPONSE; PLASMA TREATMENT; POSITIVE SHIFT; SINGLE NANOWIRES; SURFACE MECHANISM; SURFACE MODIFICATION; ULTRAVIOLET ILLUMINATION; ZNO; ZNO NANOWIRES;

CARRIER CONCENTRATION; CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; HYDROGEN; MESFET DEVICES; NANOWIRES; OXYGEN; PLASMA APPLICATIONS; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING ZINC COMPOUNDS; SENSORS; SURFACE ANALYSIS; SURFACE TREATMENT; ZINC OXIDE;

ELECTRIC WIRE;

EID: 70349253866     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.08.054     Document Type: Article

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