Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime

IET Circuits, Devices and Systems

Volumn 6, Issue 2, 2012, Pages 130-135

  Castro Carranza, A ^a   Estrada, M ^b   Nolasco, J C ^a   Cerdeira, A ^b   Marsal, L F ^a   Iniguez B ^a   PallareS J ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; CAPACITANCE MODEL; COMPACT MODEL; CONTINUOUS MODELS; MODEL PARAMETERS; ORGANIC THIN FILM TRANSISTORS; OVERLAP CAPACITANCE; PARAMETER-EXTRACTION METHOD; QUASISTATIC APPROXIMATIONS; SATURATION REGIME; TOTAL CHARGE; UNIFIED MODEL;

CHEMICAL SENSORS; PARAMETER EXTRACTION; THIN FILM TRANSISTORS;

CAPACITANCE;

EID: 84859069204     PISSN: 1751858X     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-cds.2010.0372     Document Type: Article

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