Oxide insertion layer in organic semiconductor devices

Journal of Photonics for Energy

Volumn 1, Issue 1, 2011, Pages

  Irfan, ^a   Ding, Huanjun ^a   So, Franky ^b   Gao, Yongli ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Organic light emitting diodes; Organic photovoltaic cells; Photoemission spectroscopy

Indexed keywords

COUNTER-INTUITIVE PHENOMENON; ELECTRONIC ENERGY LEVELS; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION; HOLE TRANSPORT LAYERS; INDIUM TIN OXIDE; INSERTION LAYERS; INVERSE PHOTOEMISSION SPECTROSCOPY; METAL OXIDES; OPTIMUM THICKNESS; ORGANIC PHOTOVOLTAIC CELLS; OXIDE LAYER; OXYGEN ADSORPTION; TRANSITION-METAL OXIDES; ULTRAVIOLET PHOTOEMISSION; X-RAY PHOTOEMISSIONS; XPS DATA;

CHEMISORPTION; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; GAS ADSORPTION; LIGHT EMITTING DIODES; METALLIC COMPOUNDS; MOLYBDENUM OXIDE; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC CELLS; TIN; TIN OXIDES; TRANSITION METALS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTOR DEVICES;

EID: 84859001929     PISSN: None     EISSN: 19477988     Source Type: Journal    
DOI: 10.1117/1.3551497     Document Type: Article

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