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Applied Physics Letters

Volumn 96, Issue 7, 2010, Pages

Energy level evolution of molybdenum trioxide interlayer between indium tin oxide and organic semiconductor

(6) Irfan, a Ding, Huanjun a Gao, Yongli a Kim, Do Young b Subbiah, Jegadesan b So, Franky b

a UNIVERSITY OF ROCHESTER (United States)

b University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY LEVEL; HOLE ACCUMULATION; INDIUM TIN OXIDE; INSULATING LAYERS; INVERSE PHOTOEMISSION SPECTROSCOPY; MOLYBDENUM TRIOXIDE; ORGANIC SEMICONDUCTOR; PTHALOCYANINES; SERIES RESISTANCES; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

LUMINESCENCE OF ORGANIC SOLIDS; MOLYBDENUM; MOLYBDENUM OXIDE; NANOBELTS; PHOTOEMISSION; PHOTOLITHOGRAPHY; POWER SUPPLY CIRCUITS; SEMICONDUCTING INDIUM; TIN; TITANIUM COMPOUNDS;

EMISSION SPECTROSCOPY;

EID: 77249149428 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3309600 Document Type: Article

Times cited : (126)

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