MoO3 surface passivation of the transparent anode in organic solar cells using ultrathin films

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Cattin, L ^a   Dahou, F ^b   Lare, Y ^c   Morsli, M ^a   Tricot, R ^a   Houari, S ^b   Mokrani, A ^a   Jondo, K ^c   Khelil, A ^b   Napo, K ^c   Bernde J C ^a  

^a UNIVERSITÉ DE NANTES   (France)

^b UNIVERSITY OF ORAN   (Algeria)

^c Laboratoire Sue l'Energie Solaire   (Togo)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CHARGE TRANSFER; FIELD EFFECT TRANSISTORS; INDIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MOLECULAR ORBITALS; MOLYBDENUM OXIDE; ORGANIC SOLAR CELLS; OXIDE FILMS; PASSIVATION; SOLAR CELLS; TIN OXIDES; ULTRATHIN FILMS;

COLLECTION EFFICIENCY; COPPER PHTHALOCYANINE; GEOMETRICAL CONSIDERATIONS; HIGHEST OCCUPIED MOLECULAR ORBITAL; METAL INSULATOR SEMICONDUCTOR STRUCTURES; SURFACE PASSIVATION; TRAPEZOIDAL BARRIER; TRIS(8-HYDROXYQUINOLINE);

COPPER COMPOUNDS;

EID: 60449085951     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077160     Document Type: Article

References (37)

1. S. E. Shaheen, C. J. Brabec, N. S. Sariciftci, F. Padinger, T. Fromherz, and J. C. Hummelen, Appl. Phys. Lett. 0003-6951 10.1063/1.1345834 78, 841 (2001).
2. J. Y. Kim, K. Lee, N. E. Coates, D. Moses, T. Q. Nguyen, M. Dante, and A. J. Heeger, Science 0036-8075 10.1126/science.1141711 317, 222 (2007).
3. P. Peumans and S. R. Forrest, Appl. Phys. Lett. 0003-6951 10.1063/1.1384001 79, 126 (2001).
4. J. Xue, S. Uchida, B. P. Rand, and S. R. Forrest, Appl. Phys. Lett. 0003-6951 10.1063/1.1829776 85, 5757 (2004).
5. E. L. Hanson, J. Guo, N. Koch, J. Schartz, and S. L. Bernasek, J. Am. Chem. Soc. 0002-7863 10.1021/ja050481s 127, 10058 (2005).
6. N. R. Armstrong, C. Carter, C. Donley, A. Simmonds, P. Lee, M. Brumbach, B. Kippelen, B. Domercq, and S. Yoo, Thin Solid Films 0040-6090 10.1016/j.tsf.2003.08.067 445, 342 (2003).
7. R. F. Salzman, J. Xue, B. P. Rand, A. Alexander, M. E. Thompson, and S. R. Forrest, Org. Electron. 1566-1199 10.1016/j.orgel.2005.09.001 6, 242 (2005).
8. H. -T. Lu and M. Yokoyama, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2003.08.032 260, 186 (2004).
9. B. Johnev, M. Vogel, K. Fostiropoulos, B. Mertesacker, M. Rusu, M. C. Lux-Steiner, and A. Weidinger, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.04. 058 488, 270 (2005).
10. B. Brousse, B. Ratier, and A. Moliton, Synth. Met. 0379-6779 10.1016/j.synthmet.2004.06.027 147, 293 (2004).
11. E. L. Bruner, N. Koch, A. R. Span, S. L. Bernasek, A. Kahn, and J. Schwartz, J. Am. Chem. Soc. 0002-7863 10.1021/ja012316s 124, 3192 (2002).
12. B. Johnev and K. Fostiropoulos, Sol. Energy Mater. Sol. Cells 92, 393 (2008). 0927-0248
13. J. C. Berǹde, French Patent No. BF 07/05502.
14. H. C. Im, D. C. Choo, T. W. Kim, J. H. Kim, J. H. Seo, Y. K. Seo, and Y. K. Kim, Thin Solid Films 0040-6090 10.1016/j.tsf.2006.10.021 515, 5099 (2007).
15. C. M. Hsu and W. -T. Wu, Appl. Phys. Lett. 0003-6951 10.1063/1.1777416 85, 840 (2004).
16. S. W. Shi, D. G. Ma, and J. B. Peng, Eur. Phys. J.: Appl. Phys. 1286-0042 10.1051/epjap:2007133 40, 141 (2007).
17. C. Qiu, Z. Xie, H. Chen, M. Wong, and H. S. Kwok, J. Appl. Phys. 0021-8979 10.1063/1.1556184 93, 3253 (2003).
18. T. Matsushima, Y. Kinoshita, and H. Murata, Appl. Phys. Lett. 0003-6951 10.1063/1.2825275 91, 253504 (2007).
19. X. -Y. Jiang, Z. -L. Zhang, J. Cao, M. A. Khan, K. -ul Haq, and W. -Q. Zhu, J. Phys. D 0022-3727 10.1088/0022-3727/40/18/007 40, 5553 (2007).
20. H. You, Y. Dai, Z. Zhang, and D. Ma, J. Appl. Phys. 0021-8979 10.1063/1.2430511 101, 026105 (2007).
21. C. -W. Chu, S. -H. Li, C. -W. Chen, V. Shrotriya, and Y. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.2126140 87, 193508 (2005).
22. S. Y. Park, Y. H. Noh, and H. H. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2186367 88, 113503 (2006).
23. I. Yoo, M. Lee, C. Lee, D. -W. Kim, I. S. Moon, and D. -H. Hwang, Synth. Met. 153, 97 (2005). 0379-6779
24. M. Y. Chan, C. S. Lee, S. L. Lai, M. K. Fung, F. L. Wong, H. Y. Sun, K. M. Lau, and S. T. Lee, J. Appl. Phys. 0021-8979 10.1063/1.2363649 100, 094506 (2006).
25. R. G. Gordon, Mater. Res. Soc. Symp. Proc. 0272-9172 426, 419 (1996).
26. P. Peumans, V. Bulovic, and S. R. Forrest, Appl. Phys. Lett. 0003-6951 10.1063/1.126433 76, 2650 (2000).
27. Q. L. Song, F. Y. Li, H. Yang, H. R. Wu, X. Z. Wang, W. Zhou, J. M. Zhao, X. M. Ding, C. H. Huang, and X. Y. Hou, Chem. Phys. Lett. 416, 42 (2005). 0009-2614
28. Z. R. Hong, Z. H. Huang, and X. T. Zeng, Chem. Phys. Lett. 0009-2614 10.1016/j.cplett.2006.05.010 425, 62 (2006).
29. Y. Berredjem, N. Karst, A. Boulmokh, A. H. Gheid, A. Drici, and J. C. Berǹde, Eur. Phys. J.: Appl. Phys. 1286-0042 10.1051/epjap:2007145 40, 163 (2007).
30. J. C. Berǹde, Y. Berredjem, L. Cattin, and M. Morsli, Appl. Phys. Lett. 0003-6951 10.1063/1.2888176 92, 083304 (2008).
31. A. Latef and J. C. Berǹde, Phys. Status Solidi A 0031-8965 10.1002/pssa.2211240123 124, 243 (1991).
32. K. L. Chopra, S. Major, and D. K. Pandya, Thin Solid Films 0040-6090 10.1016/0040-6090(83)90256-0 102, 1 (1983).
33. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
34. A. M. Cowley and S. M. Sze, J. Appl. Phys. 0021-8979 10.1063/1.1702952 36, 3212 (1965).
35. G. Xie, Y. Meng, F. Wu, C. Tao, D. Zhang, M. Liu, Q. Xue, W. Chen, and Y. Zhao, Appl. Phys. Lett. 0003-6951 10.1063/1.2890490 92, 093305 (2008).
36. C. A. Rozzi, F. Mangi, and F. Parmigiani, Phys. Rev. B 0163-1829 10.1103/PhysRevB.68.075106 68, 075106 (2003).
37. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal Semi-conductor Junctions (Academic, New York, 1972).