Persistent photoconductivity in silicon wafers

Semiconductor Science and Technology

Volumn 13, Issue 11, 1998, Pages 1294-1297

  Haddab, Y ^a   Popovic, R S ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; PHOTOCONDUCTIVITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

RECOVERY TIME CONSTANT;

SILICON WAFERS;

EID: 0032204462     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/11/011     Document Type: Article

References (7)

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2. Hewlett-Packard 1993 HP 4156A User's Dictionary Reference
3. Shimura F 1994 Oxygen in Silicon vol 42 (London: Academic)
4. Tempelhoff K, Spiegelberg F, Gleichmann R and Wruck D 1979 Precipitation of oxygen in dislocation-free silicon Phys. Status Solidi 56 213
5. Fleetwood D M 1992 "Border traps" in MOS Devices IEEE Trans. Nuc. Sci. vol. 39, 269
6. Cavallini A, Vandini M, Corticelli F, Parisini A and Armigliato A 1993 Recombination at dislocations associated with oxygen precipitation Microscopy of Semiconducting Materials 1993 (Inst. Phys. Conf. Ser. 134) ed Cullis et al (Bristol: Institute of Physics Publishing) p 115
7. O'Mara W C, Herring R B and Hunt L P 1990 Handbook of Semiconductor Silicon Technology vol XX (Park Ridge, NJ: Noyes)