The influence of inhomogeneities on broadening of fundamental transition in polar and nonpolar InGaN quantum wells dedicated for green emitters

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 1007-1010

  Gladysiewicz, Marta ^a   Kudrawiec, Robert ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

GaN; Inhomogeneous broadening; Interband transitions; Quantum wells

Indexed keywords

BARRIER WIDTHS; BUILT-IN ELECTRIC FIELDS; GAN; INDIUM CONCENTRATION; INGAN QUANTUM WELLS; INHOMOGENEITIES; INHOMOGENEOUS BROADENING; INTERBAND TRANSITIONS; MEAN VALUES; NON-POLAR; SPECTRAL RANGE;

ELECTRIC FIELDS; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS;

INDIUM;

EID: 84858831529     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100149     Document Type: Article

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