Fabrication of site-controlled InGaN quantum dots using reactive-ion etching

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 609-612

  Lee, Leung Kway ^a   Ku, P C ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Indium gallium nitride; Quantum dots; Reactive ion etching

Indexed keywords

DISCRETE ENERGIES; EMISSION LINEWIDTH; EMISSION PROPERTIES; INDIUM GALLIUM NITRIDE; INGAN QUANTUM DOTS; INGAN/GAN; MICROPHOTOLUMINESCENCE; NANO SCALE; NANOPILLAR; NANOPILLARS; QUANTUM DOT; ROOM TEMPERATURE; SINGLE QUANTUM WELL; TOPDOWN;

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; IONS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

REACTIVE ION ETCHING;

EID: 84858812962     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100428     Document Type: Article

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