Low-strain interface models for epitaxial graphene on SiC(0001)

Diamond and Related Materials

Volumn 23, Issue , 2012, Pages 178-183

  Sclauzero, Gabriele ^a   Pasquarello, Alfredo ^a  

^a EPFL   (Switzerland)

Author keywords

Buffer layer; Graphene; Interface characterization; Interface structure; Silicon carbide (SiC)

Indexed keywords

ATOMIC POSITIONS; BOND ENERGIES; C ATOMS; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; INTERFACE CHARACTERIZATION; INTERFACE MODEL; INTERFACE STRUCTURE; INTERFACE STRUCTURES; INTERFACIAL SYSTEMS; LATERAL DISPLACEMENTS; SI ATOMS; SI DANGLING BONDS; SUPER CELL;

ATOMS; BINDING ENERGY; BUFFER LAYERS; DENSITY FUNCTIONAL THEORY; EPITAXIAL GROWTH; SILICON; SILICON CARBIDE;

GRAPHENE;

EID: 84858281075     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2011.11.001     Document Type: Article

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