Stability and charge transfer at the interface between SiC(0 0 0 1) and epitaxial graphene

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1478-1481

  Sclauzero, Gabriele ^a   Pasquarello, Alfredo ^a  

^a EPFL   (Switzerland)

Author keywords

Charge transfer; Energetic stability; Epitaxial graphene; Interfaces; Silicon carbide

Indexed keywords

C ATOMS; COVALENTLY BONDED; ENERGETIC STABILITY; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; HEIGHT VARIATION; INTERFACE SYSTEM; SIC SUBSTRATES; SIC(0 0 0 1); TOTAL ENERGY;

BINDING ENERGY; CHARGE TRANSFER; EPITAXIAL GROWTH; GEOMETRY; ION EXCHANGE; POTENTIAL ENERGY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GRAPHENE;

EID: 79958025201     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.138     Document Type: Conference Paper

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