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Volumn , Issue , 2011, Pages
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Carrier injection in GaAsPN/GaPN quantum wells on silicon
a a a a a b a a a a a a a a a a b a
b
CEMES CNRS
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
ALLOYING EFFECT;
BAND STRUCTURE CALCULATION;
BAND-GAP MODIFICATION;
BANDGAP BOWING;
CARRIER INJECTION;
HIGH QUANTUM EFFICIENCY;
HIGH-RESOLUTION TRANSMISION ELECTRON MICROSCOPIES;
SILICON SUBSTRATES;
TIGHT BINDING;
ELECTRON MICROSCOPY;
ENERGY GAP;
INDIUM PHOSPHIDE;
INTERFACES (MATERIALS);
QUANTUM EFFICIENCY;
SEMICONDUCTING SILICON;
SILICON COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 84858256977
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (12)
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