Metal organic chemical vapor deposition of phase change Ge 1Sb 2Te 4 nanowires

Nano Letters

Volumn 12, Issue 3, 2012, Pages 1509-1515

  Longo, Massimo ^a   Fallica, Roberto ^a   Wiemer, Claudia ^a   Salicio, Olivier ^a   Fanciulli, Marco ^a,b   Rotunno, Enzo ^c   Lazzarini, Laura ^c  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c IMEM CNR   (Italy)

Author keywords

Ge 1Sb 2Te 4nanowires; MOCVD; phase change memory; VLS

Indexed keywords

CURRENT PULSE; DEPOSITION PRESSURES; HEXAGONAL CRYSTALS; NANO-ISLANDS; OPTIMIZED CONDITIONS; PHASE CHANGE; VLS;

GOLD COATINGS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; PHASE CHANGE MEMORY; VAPORS;

GERMANIUM;

METAL; NANOMATERIAL; ORGANIC COMPOUND;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; GAS; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; PHASE TRANSITION; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; GASES; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; METALS; MOLECULAR CONFORMATION; NANOSTRUCTURES; ORGANIC CHEMICALS; PARTICLE SIZE; PHASE TRANSITION; SURFACE PROPERTIES;

EID: 84858175146     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204301h     Document Type: Article

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