Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

Solid-State Electronics

Volumn 52, Issue 12, 2008, Pages 1904-1909

  Pavanello, Marcelo Antonio ^a,b   Martino, Joao Antonio ^a,b   Simoen, Eddy ^c   Rooyackers, Rita ^c   Collaert, Nadine ^c   Claeys, Cor ^c,d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Analog operation; Biaxial strain; Early voltage; FinFET; Intrinsic gain; Triple gate

Indexed keywords

FINS (HEAT EXCHANGE); GATE DIELECTRICS; KETONES; MODULATION; SILICON; STANDARDS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

ANALOG OPERATION; BIAXIAL STRAIN; EARLY VOLTAGE; FINFET; INTRINSIC GAIN; TRIPLE-GATE;

MOSFET DEVICES;

EID: 56049090995     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.049     Document Type: Article

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