Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks

Sensors and Actuators, B: Chemical

Volumn 164, Issue 1, 2012, Pages 64-68

  Kim, Hyonwoong ^a   Lim, Wantae ^b   Lee, Jae Hoon ^b   Pearton, S J ^c   Ren, F ^c   Jang, Soohwan ^a  

^a Dankook University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

AlGaN GaN HEMT; Hydrogen sensor; Platinum nanonetwork

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; BARRIER HEIGHTS; CURRENT CHANGE; HIGHLY SENSITIVE; HYDROGEN SENSOR; HYDROGEN-SENSING; LIFTOFF TECHNIQUE; NANO-NETWORKS; NANONETWORK; PT THIN FILMS; SEMI-CONDUCTOR SURFACES; SOLUTION PHASE METHODS; SURFACE AREA;

CHEMICAL SENSORS; COATINGS; GALLIUM NITRIDE; HYDROGEN; PHOTORESISTS; SEMICONDUCTOR DIODES; SYNTHESIS (CHEMICAL);

PLATINUM;

EID: 84858063800     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.01.067     Document Type: Article

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