Improved hydrogen-sensing properties of a Pt SiO2 GaN schottky diode

Electrochemical and Solid-State Letters

Volumn 10, Issue 12, 2007, Pages

  Tsai, Tsung Han ^a   Huang, Jun Rui ^a   Lin, Kun Wei ^b   Hung, Chin Wen ^a   Hsu, Wei Chou ^a   Chen, Huey Ing ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHAOYANG UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HYDROGEN; PLATINUM; SCHOTTKY BARRIER DIODES; SENSITIVITY ANALYSIS; THERMAL EFFECTS;

HYDROGEN-SENSING PROPERTIES; SENSITIVITY RATIOS (SF);

SILICA;

EID: 35348845740     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2787873     Document Type: Article

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