Uniaxial stress-modulated electronic properties of a free-standing InAs nanowire

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 661-665

  Alam, Khairul ^a  

^a EAST WEST UNIVERSITY   (Bangladesh)

Author keywords

InAs nanowires; strain modulated electronic properties; tight binding; wave function symmetry

Indexed keywords

AXIAL STRESS; BAND GAP VARIATION; BAND WAVE FUNCTIONS; CRYSTALLOGRAPHIC DIRECTIONS; DIRECT BAND GAP; EXTERNAL STRESS; HOLE EFFECTIVE MASS; INAS; INDIRECT TRANSITION; ORBITAL BASIS; ORBITALS; QUANTUM SIMULATIONS; TIGHT BINDING; UNIAXIAL STRESS;

ENERGY GAP; INDIUM ARSENIDE; NANOWIRES; QUANTUM CHEMISTRY; TENSILE STRESS; WAVE FUNCTIONS;

ELECTRONIC PROPERTIES;

EID: 84857653234     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2177096     Document Type: Article

References (27)

1. H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P. Leu, K. Ganapathi, E. Plis, H. Kim, S.-Y. Chen, M. Madsen, A. Ford, Y.-L. Chueh, S. Krishna, S. Salahuddin, and A. Javey, "Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors," Nature, vol. 468, no. 7321, pp. 286-289, Nov. 2010.
2. H. Fang, M. Madsen, C. Carraro, K. Takei, H. Kim, E. Plis, S.-Y. Chen, S. Krishna, Y.-L. Chueh, R. Maboudian, and A. Javey, "Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator," Appl. Phys. Lett., vol. 98, no. 1, pp. 012 111-1-012 111-3, Jan. 2011.
3. C. Thelander, L. E. Froberg, C. Rehnstedt, L. Samuelson, and L. E. Wernersson, "Vertical enhancement-mode InAs nanowire field effect transistor with 50-nm wrap gate," IEEE Electron Device Lett., vol. 29, no. 3, pp. 206-208, Mar. 2008. (Pubitemid 351386955)
4. X. Jiang, Q. Xiong, S. Nam, F. Qian, Y. Li, and C. Lieber, "InAs/InP radial nanowire heterostructures as high electron mobility devices," Nano Lett., vol. 7, no. 10, pp. 3214-3218, Oct. 2007. (Pubitemid 350132956)
5. K. Uchida, R. Zednik, C. H. Lu, H. Jagannathan, J. McVittie, P. C. McIntyre, and Y. Nishi, "Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs," in IEDM Tech. Dig., New York, 2004, pp. 229-232. (Pubitemid 40940652)
6. S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, "Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained-Si metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 80, no. 3, pp. 1567-1577, Aug. 1996. (Pubitemid 126539021)
7. H. R. Gutierreza, R. M. Paniago, J. R. R. Bortoleto, and M. A. Cotta, "Three-dimensional mapping of the strain anisotropy in self-assembled quantum-wires by grazing incidence X-ray diffraction," Appl. Phys. Lett., vol. 85, no. 16, pp. 3581-3583, Oct. 2004.
8. J. Eymery, F. Rieutord, V. F. Nicolin, O. Robach, Y.-M. Niquet, L. Froberg, T. Martensson, and L. Samuelson, "Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques," Nano Lett., vol. 7, no. 9, pp. 2596-2601, Sep. 2007. (Pubitemid 47522406)
9. A. Mazuelas, L. Gonzalez, J. M. Garcia, Y. Gonzalez, T. Schuell, C. Priester, and H. T. Metzger, "Strain determination in MBE-grown InAs quantum wires on InP," Phys. Rev. B, vol. 73, no. 4, p. 045 312, Jan. 2006.
10. M. W. Larsson, J. B. Wagner, M. Wallin, P. Hakansson, L. E. Froberg, L. Samuelson, and L. R. Wallenberg, "Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires," Nanotechnology, vol. 18, no. 1, p. 015 504, Jan. 2007.
11. D. Shiri, Y. Kong, A. Buin, and M. P. Anantram, "Strain induced change of bandgap and effective mass in silicon nanowires," Appl. Phys. Lett., vol. 93, no. 7, pp. 073 114-1-073 114-3, Aug. 2008.
12. P. W. Leu, A. Svizhenko, and K. Cho, "Ab initio calculations of the mechanical and electronic properties of strained Si nanowires," Phys. Rev. B, vol. 77, no. 23, p. 235 305, Jun. 2008.
13. R. Sajjad and K. Alam, "Electronic properties of a strained (100) silicon nanowire," J. Appl. Phys., vol. 105, no. 4, pp. 044 307-1-044 307-6, Feb. 2009.
14. P. Logan and X. Peng, "Strain-modulated electronic properties of Ge nanowires: A first-principles study," Phys. Rev. B, vol. 80, no. 11, pp. 115322-1-115322-7, Sep. 2009.
15. X. Peng, F. Tang, and P. Logan, "Band structure of Si/Ge core-shell nanowires along the direction modulated by external uniaxial strain," J. Phys. Condens. Matter., vol. 23, no. 11, p. 115 502, Mar. 2011.
16. P. Boring, J.-M. Jancu, B. Gil, D. Bertho, C. Jouanin, and K. J. Moore, "Uniaxial-stress determination of the symmetry of excitons associated with the miniband dispersion in (Ga, In)As-GaAs superlattices," Phys. Rev. B, vol. 46, no. 8, pp. 4764-4768, Aug. 1992.
17. J. M. Jancu, R. Scholz, F. Beltram, and F. Bassani, "Empirical spds* tight-binding calculation for cubic semiconductors: General method and material parameters," Phys. Rev. B, vol. 57, no. 11, pp. 6493-6507, Mar. 1998. (Pubitemid 128486252)
18. E. Lind, M. P. Persson, Y. M. Niquet, and L. E. Wernersson, "Band structure effects on the scaling properties of InAs nanowire MOSFETs, " IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 201-205 Feb. 2009.
19. K. Alam and R. N. Sajjad, "Electronic properties and orientation-dependent performance of InAs nanowire transistors," IEEE Trans. Elec-tron Devices, vol. 57, no. 11, pp. 2880-2885, Nov. 2010.
20. Y M. Niquet and D. C. Mojica, "Quantum dots and tunnel barriers in InAs/InP nanowire heterostructures: Electronic and optical properties," Phys. Rev. B, vol. 77, no. 11, p. 115316, Mar. 2008.
21. G. Liu, Y Chen, C. Jia, G.-D. Hao, and Z. Wang, "Spin splitting modulated by uniaxial stress in InAs nanowires," J. Phys. Condens. Matter, vol. 23, no. 1, p. 015 801, 2011.
22. J. J. Wortman and R. A. Evans, "Young's modulus, shear modulus, and Poisson's ratio in silicon and germanium," J. Appl. Phys., vol. 36, no. 1, pp. 153-156, Jan. 1965.
23. J. C. Slater and G. F. Koster, "Simplified LCAO method for the periodic potential problem," Phys. Rev., vol. 94, no. 6, pp. 1498-1524, Jun. 1954.
24. T. B. Boykin, G. Klimeck, R. C. Bowen, and F. Oyafuso, "Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory," Phys. Rev. B, vol. 66, no. 12, p. 125 207, Sep. 2002.
25. Y M. Niquet, A. Lherbier, N. H. Quang, M. V. Fernández-Serra, X. Blase, and C. Delerue, "Electronic structure of semiconductor nanowires," Phys. Rev. B, vol. 73, no. 16, p. 165 319, Apr. 2006.
26. Y M. Niquet, C. Delerue, G. Allan, and M. Lannoo, "Interpretation and theory of tunneling experiments on single nanostructures," Phys. Rev. B, vol. 65, no. 16, p. 165 334, Apr. 2002.
27. T. B. Boykin, "Incorporation of incompleteness in the k • p perturbation theory," Phys. Rev. B, vol. 52, no. 23, pp. 16317-16320, Dec. 1995.