Schottky barrier control gate-type carbon nanotube field-effect transistor biosensors

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

  Abe, Masuhiro ^a,b   Ohno, Yasuhide ^b,c   Matsumoto, Kazuhiko ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CONTROL GATES; EXPERIMENTAL MEASUREMENTS; SCHOTTKY BARRIERS;

CARBON NANOTUBES; FINITE ELEMENT METHOD; MESFET DEVICES; NANOSENSORS; SCHOTTKY BARRIER DIODES;

BIOSENSORS;

EID: 84857435182     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3681902     Document Type: Article

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